The AVS 22nd International Conference on Atomic Layer Deposition (ALD 2022) featuring the 9th International Atomic Layer Etching Workshop (ALE 2022) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching. Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. This year, the ALD conference will again incorporate the Atomic Layer Etching 2022 Workshop (ALE 2022), so that attendees can interact freely. The conference will take place Sunday, June 26-Wednesday, June 29, 2022, at the International Convention Center (ICC) Ghent in Ghent, Belgium.
As in past conferences, the meeting will be preceded (Sunday, June 26) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, June 27-29) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 800+.
ALD & ALE Tutorial Speakers
- Sumit Agarwal (Colorado School of Mines, USA), “Plasma Assisted Atomic Layer Processing and Diagnostics”
- Seán Barry (Carleton University, Canada), “How I Learned to Stop Worrying and Love the Surface”
- Ageeth Bol (Eindhoven University of Technology, The Netherlands), “Synthesis and Integration of 2D Materials Using ALD”
- Maarit Karppinen (Aalto University, Finland), “Combined Atomic/Molecular Layer Deposition for Designer’s Metal-Organic Materials and Inorganic-Organic Multilayers”
- Philippe Vereecken (imec, Belgium), “Artificial Interphases for Interface Control in Li-ion Batteries”
- Giuseppe Verni (ASM, Belgium), “How Did (and Will) Atomic Scale Processing Change the Logic and Memory Industries?”
ALD & ALE Plenary Speakers
- Philippe Leray (imec, Belgium) and Steven Steen (ASML, The Netherlands), “New Process Requirements Driven by More than Moore and More Moore Device Integration Innovations”
- Angélique Raley (Tokyo Electron America, Inc., USA), “Atomic Layer Etching: Real World Utilization and Future Outlook”
ALD Innovator Awardeees
- 2022: Cheol Seong Hwang (Seoul National University, South Korea), “Prospects of Atomic Layer Deposition for Cell-Stacking Technology of Semiconductor Memory Devices”
- 2021: Stacey Bent (Stanford University, USA), “Up, Down and All Around: Controlling Atomic Placement in ALD”
- 2020: Mikko Ritala (University of Helsinki, Finland) “Innovations in ALD Chemistry Open the Door to Applications”
ALD Invited Speakers
- Ashley Bielinski (Argonne National Laboratories, USA), “Pyroelectric Calorimetry: Measuring the Time-Resolved Heat of ALD Half Reactions”
- Elisabeth Blanquet (University Grenoble Alpes, France), “Revisited Thermal and Plasma Enhanced Atomic Layer Deposition Processes of Metal Nitrides”
- Rong Chen (Huazhong University of Science and Technology, China), “Atomic Layer Deposition for Display from Photoluminescent Materials to Devices and Encapsulation”
- Romain Gaillac (Air Liquide, USA), “A User Experience Feedback on Numerical Simulation for CVD/ALD Precursor Design & Development”
- Mark Losego (Georgia Institute of Technology, USA), “Vapor Phase Infiltration of Polymers for the Synthesis of Organic-Inorganic Hybrid Materials: Process Kinetics‚ Chemical Pathways‚ and Final Hybrid Structure”
- Bart Macco (TU Eindhoven, The Netherlands), “Atomic Layer Deposition for Silicon-Perovskite Tandem Cells”
- Suzanne Mohney (Penn State University & Freiberg Institute of Advanced Studies, USA), “Atomic Layer Deposition of Layered Chalcogenides”
- Ola Nilsen (University of Oslo, Norway), “Photoactive Hybrid Materials by MLD”
- Rachel Nye (NCSU, USA), “TiO2 Area-Selective Deposition: Using Selectivity Loss Mechanisms to Advance Applications in Nanopatterns and EUV Resist Materials”
- Il-Kwon Oh (Ajou University, South Korea), “Study on Area-Selective Atomic Layer Deposition of Al2O3 with a Series of Al Precursors”
- Maksym Plakhotnyuk (ATLANT 3D, Denmark), “Inherently Selective Atomic Layer Process Based on Spatial Micronozzles: Microreactor Selective Area Direct Atomic Processing (µSADALP)”
- Bonggeun Shong (Hongik University, South Korea), “Theoretical Understanding on the Chemical Principles of Atomic Layer Deposition”
- Jonas Sundqvist (BALD Engineering AB/TECHCET LLC CA, Sweden), “High ALD Equipment and Precursor Demand and 5 Year Forecast Due to Continued Semiconductor Device Scaling and Fab Expansions”
- Aile Tamm (University Tartu, Estonia), “Mechanical Properties of ALD Coatings”
- Juhani Taskinen (Picosun, Finland), “Atomic Layer Deposition Enables Dimensionless‚ Biocompatible Encasings for Medical Implants Pro-Longing Their Lifetime”
- Christian Wenger (IHP-Leibniz-Institut für Innovative Mikroelektronik, Germany), “Brain-Based Inspiration: Towards Neuromorphic Computing with ALD Based Memristive Devices”
- Andreas Werbrouck (Stanford University, USA), “Get the Full Picture: Full-Range Time-Resolved In Situ Mass Spectrometry During ALD”
ALE Invited Speakers
- Mike Cooke (Oxford Instruments, United Kingdom), “From Barrel to ALE: A Lifetime in Etch/A Material and System Design Perspective”
- John Ekerdt (University of Texas Austin, USA), “Photon-Activated Metal Ale”
- Sumiko Fujisaki (Hitachi, Japan), “Thermal-Cyclic Atomic Layer Etching of Cobalt by Plasma Oxidation and Organometallization”
- Tomoko Ito (Osaka University, Japan), “Surface Reaction Mechanisms by Metal-Organic Compound Formations in Atomic Layer Etching Processes”
- Adrie Mackus (Eindhoven University, The Netherlands), “Plasma Processes for Isotropic and Anisotropic Atomic Layer Etching”
- Jessica Murdzek (University of Colorado, USA) “Chlorination and Ligand Addition for Thermal ALE of Metals”
- Christophe Vallée (SUNY Poly, USA), “ALE from Selective Etching to Selective Deposition”